Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices

GaN is one of the third-generation broadband semiconductor materials developed rapidly in recent years, and Algan/GanHEMT has a broad application prospect fields high temperature, power, frequency radiation resistance, etc. In gallium nitride based electron mobility transistors have been widely used emerging industries, such as 5G technology, new energy vehicles, unmanned aircraft other fields, due to their power voltage resistance. However, density HEMT devices, self-heating effect will lead significant increase junction temperature device, which seriously affect performance, reliability, lifetime device. this paper, characteristics (GaN HEMTs) are studied, on devices analyzed. order reduce device improve reliability structure proposed paper. The replaces conventional silicon Si3N4 with highly thermally conductive diamond SiC substrate passivation layer facilitates heat dissipation from layer. Also, employs hybrid barrier field plate. Simulation results show that about 30% lower peak, 47% higher output current, 28% transconductivity, up 18.22% current collapse rate compared structure.